검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer Nohira H, Shiraishi T, Takahashi K, Hattori T, Kashiwagi I, Ohshima C, Ohmi S, Iwai H, Joumori S, Nakajima K, Suzuki M, Kimura K Applied Surface Science, 234(1-4), 493, 2004 |
| 2 |
Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics Ohshima C, Taguchi J, Kashiwagi I, Yamamoto H, Ohmi S, Iwai H Applied Surface Science, 216(1-4), 302, 2003 |
| 3 |
Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application Ohmi S, Kobayashi C, Kashiwagi I, Ohshima C, Ishiwara H, Iwai H Journal of the Electrochemical Society, 150(7), F134, 2003 |