검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals Ohtani N, Ohshige C, Katsuno M, Fujimoto T, Sato S, Tsuge H, Ohashi W, Yano T, Matsuhata H, Kitabatake M Journal of Crystal Growth, 386, 9, 2014 |
| 2 |
Defect formation during the initial stage of physical vapor transport growth of 4H-SiC in the [11(2)over-bar0] direction Ohshige C, Takahashi T, Ohtani N, Katsuno M, Fujimoto T, Sato S, Tsuge H, Yano T, Matsuhata H, Kitabatake M Journal of Crystal Growth, 408, 1, 2014 |