검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Self-assembled lateral Bi-quantum-dot molecule formation by gas-source molecular beam epitaxy Suraprapapich S, Shen YM, Odnoblyudov VA, Fainman Y, Panyakeow S, Tu CW Journal of Crystal Growth, 301, 735, 2007 |
| 2 |
Amber GaNP-based light-emitting diodes directly grown on GaP(100) substrates Odnoblyudov VA, Tu CW Journal of Vacuum Science & Technology B, 24(5), 2202, 2006 |
| 3 |
Room-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(100) substrates Odnoblyudov VA, Tu CW Journal of Crystal Growth, 279(1-2), 20, 2005 |
| 4 |
Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices Odnoblyudov VA, Yu CW Journal of Vacuum Science & Technology B, 23(3), 1317, 2005 |
| 5 |
InAs/InGaAsN quantum dots emitting at 1.55 mu m grown by molecular beam epitaxy Ustinov VM, Egorov AY, Odnoblyudov VA, Kryzhanovskaya NV, Musikhin YG, Tsatsul'nikov AF, Alferov ZI Journal of Crystal Growth, 251(1-4), 388, 2003 |