검색결과 : 3건
No. | Article |
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1 |
Selective deposition of 3C-SiC epitaxially grown on SOI subtrates Eickhoff M, Zappe S, Nielsen A, Krotz G, Obermeier E, Vouroutzis N, Stoemenos J Materials Science Forum, 353-356, 175, 2001 |
2 |
High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications Zappe S, Franklin J, Obermeier E, Eickhoff M, Moller H, Krotz G, Rougeot C, Lefort O, Stoemenos J Materials Science Forum, 353-356, 753, 2001 |
3 |
Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system Zappe S, Moller H, Krotz G, Eickhoff M, Skorupa W, Obermeier E, Stoemenos J Materials Science Forum, 338-3, 529, 2000 |