화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Selective deposition of 3C-SiC epitaxially grown on SOI subtrates
Eickhoff M, Zappe S, Nielsen A, Krotz G, Obermeier E, Vouroutzis N, Stoemenos J
Materials Science Forum, 353-356, 175, 2001
2 High temperature 10 bar pressure sensor based on 3C-SiC/SOI for turbine control applications
Zappe S, Franklin J, Obermeier E, Eickhoff M, Moller H, Krotz G, Rougeot C, Lefort O, Stoemenos J
Materials Science Forum, 353-356, 753, 2001
3 Structural characteristics of 3C-SiC films epitaxially grown on the Si/Si3N4/SiO2 system
Zappe S, Moller H, Krotz G, Eickhoff M, Skorupa W, Obermeier E, Stoemenos J
Materials Science Forum, 338-3, 529, 2000