검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Study of buried junction and uniformity effects in CdTe/CdS solar cells using a combined OBIC and EQE apparatus Major JD, Durose K Thin Solid Films, 517(7), 2419, 2009 |
| 2 |
Towards the fabrication and measurement of high sensitivity SiC-UV detectors with oxide ramp termination Brezeanu G, Godignon P, Dimitrova E, Raynaud C, Planson D, Mihaila A, Udrea F, Milian J, Amaratunga G, Boianceanu C Materials Science Forum, 457-460, 1495, 2004 |
| 3 |
Analysis of high leakage currents in 4H-SiC Schottky barrier diodes using optical beam-induced current measurements Tsuji T, Izumi S, Ueda A, Fujisawa H, Ueno K, Tsuchida H, Kamata I, Jikimoto T, Izumi K Materials Science Forum, 389-3, 1141, 2002 |
| 4 |
Study of 4H-SiC high-voltage bipolar diodes under reverse bias using electrical and OBIC characterization Isoird K, Lazar M, Locatelli ML, Raynaud C, Planson D, Chante JP Materials Science Forum, 389-3, 1289, 2002 |
| 5 |
OBIC measurements of 1.3kV 6H-SiC bipolar diodes protected by junction termination extension Wang SR, Raynaud C, Planson D, Lazar M, Chante JP Materials Science Forum, 433-4, 863, 2002 |
| 6 |
Study of 6H-SiC high voltage bipolar diodes under reverse biases Isoird K, Lazar M, Ottaviani L, Locatelli ML, Raynaud C, Planson D, Chante JP Applied Surface Science, 184(1-4), 477, 2001 |
| 7 |
Optical beam induced current analysis of high-voltage 4H-SiC Schottky rectifiers Tsuji T, Asai R, Ueno K, Ogino S Materials Science Forum, 338-3, 1195, 2000 |
| 8 |
Study of the breakdown voltage of protected or non-protected 6H-SiC bipolar diodes by OBIC characterisation Isoird K, Ottaviani L, Locatelli ML, Planson D, Raynaud C, Bevilacqua P, Chante JP Materials Science Forum, 338-3, 1363, 2000 |