검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Process simplification for 15.6x15.6 cm(2) interdigitated back contact silicon solar cells by laser doping Zielinski B, O'Sullivan BJ, Singh S, de Castro AU, Li Y, Jambaldinni S, Debucquoy M, Mertens R, Poortmans J Solar Energy Materials and Solar Cells, 163, 66, 2017 |
| 2 |
Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S Solid-State Electronics, 52(9), 1303, 2008 |
| 3 |
Interface states and Pb defects at the Si(100)/HfO2 interface Hurley PK, O'Sullivan BJ, Afanas'ev VV, Stesmans A Electrochemical and Solid State Letters, 8(2), G44, 2005 |
| 4 |
Electrical evaluation of defects at the Si(100)/HfO2 interface O'Sullivan BJ, Hurley PK, O'Connor E, Modreanu M, Roussel H, Jimenez C, Dubourdieu C, Audier M, Senateur JP Journal of the Electrochemical Society, 151(8), G493, 2004 |
| 5 |
Interface of ultrathin HfO2 films deposited by UV-photo-CVD Fang Q, Zhang JY, Wang Z, Modreanu M, O'Sullivan BJ, Hurley PK, Leedham TL, Hywel D, Audier MA, Jimenez C, Senateur JP, Boyd IW Thin Solid Films, 453-54, 203, 2004 |
| 6 |
Interface of tantalum oxide films on silicon by UV annealing at low temperature Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW Thin Solid Films, 428(1-2), 248, 2003 |
| 7 |
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley PK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW Thin Solid Films, 428(1-2), 263, 2003 |
| 8 |
Characterisation of HfO2 deposited by photo-induced chemical vapour deposition Fang Q, Zhang JY, Wang ZM, Wu JX, O'Sullivan BJ, Hurley RK, Leedham TL, Davies H, Audier MA, Jimenez C, Senateur JP, Boyd IW Thin Solid Films, 427(1-2), 391, 2003 |
| 9 |
Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing Hurley PK, O'Sullivan BJ, Cubaynes FN, Stolk PA, Widdershoven FP, Das JH Journal of the Electrochemical Society, 149(3), G194, 2002 |