| 1 |
How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire
Hu N, Dinh DV, Pristovsek M, Honda Y, Amano H
Journal of Crystal Growth, 507, 205, 2019 |
| 2 |
Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy
Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
Journal of Crystal Growth, 507, 357, 2019 |
| 3 |
Influence of the AlN nucleation layer on the properties of AlGaN/GaN heterostructure on Si (111) substrates
Pan L, Dong X, Li ZH, Luo WK, Ni JY
Applied Surface Science, 447, 512, 2018 |
| 4 |
Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer
Yu JD, Wang J, Yu WY, Wu C, Lu BY, Deng J, Zhang ZX, Li X, Hao ZB, Wang L, Han YJ, Luo Y, Sun CZ, Xiong B, Li HT
Thin Solid Films, 662, 174, 2018 |
| 5 |
Synthesis and characterization of sputtered titanium nitride as a nucleation layer for novel neural electrode coatings
Sait RA, Cross RBM
Applied Surface Science, 424, 290, 2017 |
| 6 |
Application of Pulsed Chemical Vapor Deposited Tungsten Thin Film as a Nucleation Layer for Ultrahigh Aspect Ratio Tungsten-Plug Fill Process
Jang B, Kim SH
Korean Journal of Materials Research, 26(9), 486, 2016 |
| 7 |
Silicon nanowire networks for multi-stage thermoelectric modules
Norris KJ, Garrett MP, Zhang J, Coleman E, Tompa GS, Kobayashi NP
Energy Conversion and Management, 96, 100, 2015 |
| 8 |
Influence of LT-GaN nucleation layer on the structural and optical properties of MOVPE-grown a-plane GaN
Chang SP, Yang HC, Lu TC, Kuo HC, Wang SC
Journal of Crystal Growth, 312(8), 1307, 2010 |
| 9 |
Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition
Xu FJ, Xu J, Shen B, Miao ZL, Huang S, Lu L, Yang ZJ, Qin ZX, Zhang GY
Thin Solid Films, 517(2), 588, 2008 |
| 10 |
Transmission electron microscopy study of hexagonal GaN film grown on GaAs (001) substrate by using AlAs nucleation layer
Wan L, Duan XF, Chen H, Liu HF, Li ZQ, Huang Q, Zhou JM
Journal of Crystal Growth, 220(4), 379, 2000 |
