검색결과 : 53건
| No. | Article |
|---|---|
| 1 |
Identifying carbon as the source of visible single-photon emission from hexagonal boron nitride Mendelson N, Chugh D, Reimers JR, Cheng TS, Gottscholl A, Long H, Mellor CJ, Zettl A, Dyakonov V, Beton PH, Novikov SV, Jagadish C, Tan HH, Ford MJ, Toth M, Bradac C, Aharonovich I Nature Materials, 20(3), 321, 2021 |
| 2 |
Thermoelectric properties of W1-xNbxSe2-ySy polycrystalline compounds Yakovleva GE, Romanenko AI, Ledneva AY, Belyavin VA, Kuznetsov VA, Berdinsky AS, Burkov AT, Konstantinov PP, Novikov SV, Han MK, Kim SJ, Fedorov VE Journal of the American Ceramic Society, 102(10), 6060, 2019 |
| 3 |
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth Qian H, Lee KB, Vajargah SH, Novikov SV, Guiney I, Zaidi ZH, Jiang S, Wallis DJ, Foxon CT, Humphreys CJ, Houston PA Journal of Crystal Growth, 459, 185, 2017 |
| 4 |
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources Novikov SV, Foxon CT Journal of Crystal Growth, 477, 154, 2017 |
| 5 |
Growth of free-standing bulk wurtzite AlxGa1-xN layers by molecular beam epitaxy using a highly efficient RF plasma source Novikov SV, Staddon CR, Sahonta SL, Oliver RA, Humphreys CJ, Foxon CT Journal of Crystal Growth, 456, 151, 2016 |
| 6 |
Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy Svensson SP, Sarney WL, Yu KM, Ting M, Calley WL, Novikov SV, Foxon CT, Walukiewicz W Journal of Crystal Growth, 425, 2, 2015 |
| 7 |
Molecular beam epitaxy of free-standing wurtzite AlxGa1-xN layers Novikov SV, Staddon CR, Martin RW, Kent AJ, Foxon CT Journal of Crystal Growth, 425, 125, 2015 |
| 8 |
Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M, Foxon CT Journal of Crystal Growth, 425, 255, 2015 |
| 9 |
Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers Waheeda SN, Zainal N, Hassan Z, Novikov SV, Akimov AV, Kent AJ Applied Surface Science, 317, 1010, 2014 |
| 10 |
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D Journal of Crystal Growth, 386, 135, 2014 |