검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy Moshegov NT, Nordquist CD, Cai WZ, Mayer TS, Lubyshev DI, Miller DL Journal of Vacuum Science & Technology B, 19(4), 1541, 2001 |
| 2 |
Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth Micovic M, Nordquist CD, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 16(3), 962, 1998 |
| 3 |
Optimization of In0.53Ga0.47As reactive ion etching with CH4/H-2 using design of experiment methods Zavieh L, Nordquist CD, Mayer TS Journal of Vacuum Science & Technology B, 16(3), 1024, 1998 |
| 4 |
Magnetron ion etching of through-wafer via holes for GaAs monolithic microwave integrated circuits using SiCl4 Mitra A, Nordquist CD, Jackson TN, Mayer TS Journal of Vacuum Science & Technology B, 16(5), 2695, 1998 |