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| No. | Article |
|---|---|
| 1 |
GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4 Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 16(3), 972, 1998 |