검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Formation of precipitates in heavily boron doped 4H-SiC Linnarsson MK, Janson MS, Nordell N, Wong-Leung J, Schoner A Applied Surface Science, 252(15), 5316, 2006 |
| 2 |
Dissociation energy of the passivating hydrogen-aluminum complex in 4H-SiC Janson MS, Hallen A, Linnarsson MK, Nordell N, Karlsson S, Svensson BG Materials Science Forum, 353-356, 427, 2001 |
| 3 |
Epitaxial growth of beta-SiC on ion-beam synthesized beta-SiC: Structural characterization Romano-Rodriguez A, Perez-Rodriguez A, Serre C, Morante JR, Esteve J, Acero MC, Kogler R, Skorupa W, Ostling M, Nordell N, Karlsson S, Van Landuyt J Materials Science Forum, 338-3, 309, 2000 |
| 4 |
Al/Si ohmic contacts to p-type 4H-SiC for power devices Kassamakova L, Kakanakov R, Kassamakov I, Nordell N, Savage S, Svedberg EB, Madsen LD Materials Science Forum, 338-3, 1009, 2000 |
| 5 |
B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing Valcheva E, Paskova T, Ivanov IG, Yakimova R, Wahab Q, Savage S, Nordell N, Harris CI Journal of Vacuum Science & Technology B, 17(3), 1040, 1999 |
| 6 |
Design and Performance of a New Reactor for Vapor-Phase Epitaxy of 3C, 6H, and 4H SiC Nordell N, Schoner A, Andersson SG Journal of the Electrochemical Society, 143(9), 2910, 1996 |
| 7 |
Influence of H-2 Addition and Growth Temperature on CVD of SiC Using Hexamethyldisilane and Ar Nordell N, Nishino S, Yang JW, Jacob C, Pirouz P Journal of the Electrochemical Society, 142(2), 565, 1995 |