| 1 |
Investigation of the n-side structures of II-VI compound semiconductor optical devices on InP substrates
Ishii K, Amagasu R, Nomura I
Journal of Crystal Growth, 512, 96, 2019 |
| 2 |
Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE
Takamatsu S, Nomura I, Shiraishi T, Kishino K
Journal of Crystal Growth, 425, 199, 2015 |
| 3 |
Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices
Kobayashi T, Nomura I, Murakami K, Kishino K
Journal of Crystal Growth, 378, 263, 2013 |
| 4 |
First photopumped yellow-green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates
Ebisawa T, Nomura I, Kishino K, Tasai K, Nakamura H, Asatsuma T, Nakajima H
Journal of Crystal Growth, 311(8), 2291, 2009 |
| 5 |
Intermediate-temperature solid oxide fuel cells using perovskite-type oxide based on barium cerate
Matsumoto H, Nomura I, Okada S, Ishihara T
Solid State Ionics, 179(27-32), 1486, 2008 |
| 6 |
Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II-VI compound superlattices on InP substrates
Nomura I, Yamazaki T, Hayashi H, Hayami K, Kato M, Kishino K
Journal of Crystal Growth, 301, 273, 2007 |
| 7 |
MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates
Takizawa M, Nomura I, Che SB, Kikuchi A, Shimomura K, Kishino K
Journal of Crystal Growth, 227, 660, 2001 |
| 8 |
Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy
Che SB, Nomura I, Shinozaki W, Kikuchi A, Shimomura K, Kishino K
Journal of Crystal Growth, 214, 321, 2000 |
