검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Deep level investigation by current and capacitance transient spectroscopy in 4H-SiC MESFETs on semi-insulating substrates. Gassoumi M, Sghaier N, Dermoul I, Chekir F, Maaref H, Bluet JM, Guillot G, Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 457-460, 1185, 2004 |
| 2 |
Hot-carrier luminescence in 4H-SiC MESFETs Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C Materials Science Forum, 389-3, 1371, 2002 |
| 3 |
SiC microwave power devices Morvan E, Noblanc O, Dua C, Brylinski C Materials Science Forum, 353-356, 669, 2001 |
| 4 |
Noise behavior of 4H-SiC MESFETs at low drain voltage Banc C, Royet AS, Ouisse T, Bano E, Noblanc O, Brylinski C Materials Science Forum, 353-356, 703, 2001 |
| 5 |
Thermal annealing effect on TiN/Ti layers on 4H-SiC: Metal-semiconductor interface characterization Defives D, Durand O, Wyczisk F, Olivier J, Noblanc O, Brylinski C Materials Science Forum, 338-3, 411, 2000 |
| 6 |
Power density comparison between microwave power MESFET's processed on conductive and semi-insulating wafer Noblanc O, Arnodo C, Dua C, Chartier E, Brylinski C Materials Science Forum, 338-3, 1247, 2000 |
| 7 |
XPS characterization of tungsten-based contact layers on 4H-SiC Kakanakova-Georgieva A, Marinova T, Noblanc O, Arnodo C, Cassette S, Brylinski C Thin Solid Films, 337(1-2), 180, 1999 |
| 8 |
Characterization of ohmic and Schottky contacts on SiC Kakanakova-Georgieva A, Marinova T, Noblanc O, Arnodo C, Cassette S, Brylinski C Thin Solid Films, 343-344, 637, 1999 |