검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
N+P junction leakage current caused by oxygen precipitation defects and its temperature dependence Uchiyama H, Matsumoto K, Mchedlidze T, Nisimura M, Yamabe K Journal of the Electrochemical Society, 146(6), 2322, 1999 |
| 2 |
Fully Large-Scale Integration-Process-Compatible Si Field Emitter Technology with High Controllability of Emitter Height and Sharpness Takemura H, Furutake N, Nisimura M, Tsuida S, Yoshiki M, Okamoto A, Miyano S Journal of Vacuum Science & Technology B, 15(2), 488, 1997 |