검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Modeled optical properties of SiGe and Si layers compared to spectroscopic ellipsometry measurements Kriso C, Triozon F, Delerue C, Schneider L, Abbate F, Nolot E, Rideau D, Niquet YM, Mugny G, Tavernier C Solid-State Electronics, 129, 93, 2017 |
| 2 |
Strain effect on mobility in nanowire MOSFETs down to 10 nm width: Geometrical effects and piezoresistive model Pelloux-Prayer J, Casse M, Triozon F, Barraud S, Niquet YM, Rouviere JL, Faynot O, Reimbold G Solid-State Electronics, 125, 175, 2016 |
| 3 |
Study of the light emission in Ge layers and strained membranes on Si substrates Gassenq A, Guilloy K, Pauc N, Hartmann JM, Dias GO, Rouchon D, Tardif S, Escalante J, Duchemin I, Niquet YM, Chelnokov A, Reboud V, Calvo V Thin Solid Films, 613, 64, 2016 |
| 4 |
Multiscale simulation of carbon nanotube transistors Maneux C, Fregonese S, Zimmer T, Retailleau S, Nguyen HN, Querlioz D, Bournel A, Dollfus P, Triozon F, Niquet YM, Roche S Solid-State Electronics, 89, 26, 2013 |
| 5 |
On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H Solid-State Electronics, 53(4), 452, 2009 |
| 6 |
Asymptotic behavior of the exchange-correlation potentials from the linear-response Sham-Schluter equation Niquet YM, Fuchs M, Gonze X Journal of Chemical Physics, 118(21), 9504, 2003 |