검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H-SiC Nipoti R, Mancarella F, Moscatelli F, Rizzoli R, Zampolli S, Ferri M Electrochemical and Solid State Letters, 13(12), H432, 2010 |
| 2 |
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus Rao S, Bergamini F, Nipoti R, Saddow SE Applied Surface Science, 252(10), 3837, 2006 |
| 3 |
Ar annealing at 1600 degrees C and 1650 degrees C of Al+ implanted p(+)/n 4H-SiC diodes: Analysis of the J-V characteristics versus annealing temperature Bergamini F, Moscatelli F, Canino M, Poggi A, Nipoti R Materials Science Forum, 483, 625, 2005 |
| 4 |
J-v characteristics of Al+ ion implanted p(+)/n 4H-SiC diodes annealed in silane ambient at 1600 degrees C Bergamini A, Rao SP, Saddow SE, Nipoti R Materials Science Forum, 483, 629, 2005 |
| 5 |
n(+)/p diodes realized in SiC by phosphorus ion implantation: Electrical characterization as a function of temperature Canino M, Castaldini A, Cavallini A, Moscatelli F, Nipoti R, Poggi A Materials Science Forum, 483, 649, 2005 |
| 6 |
Competition between oxidation and recrystallization in ion amorphized (0001) 6H-SIC Poggi A, Parisini A, Solmi S, Nipoti R Materials Science Forum, 483, 665, 2005 |
| 7 |
Ni-silicide contacts to 6H-SiC: Contact resistivity and barrier height on ion implanted n-type and barrier height on p-type epilayer Moscatelli F, Scorzoni A, Poggi A, Canino M, Nipoti R Materials Science Forum, 483, 737, 2005 |
| 8 |
Measurements of charge collection efficiency of p(+)/n junction SiC detectors Moscatelli F, Scorzoni A, Poggi A, Bruzzi M, Lagomarsino S, Mersi S, Sciortino S, Lazar M, Di Placido A, Nipoti R Materials Science Forum, 483, 1021, 2005 |
| 9 |
Structural characterization of alloyed Al/Ti and Ti contacts on SiC Parisini A, Poggi A, Nipoti R Materials Science Forum, 457-460, 837, 2004 |
| 10 |
Contact resistivity and barrier height of Al/Ti ohmic contacts on p-type ion implanted 4H-and 6H-SiC Scorzoni A, Moscatelli F, Poggi A, Cardinali GC, Nipoti R Materials Science Forum, 457-460, 881, 2004 |