화학공학소재연구정보센터
검색결과 : 15건
No. Article
1 Phonon black-body radiation limit for heat dissipation in electronics
Schleeh J, Mateos J, Iniguez-de-la-Torre I, Wadefalk N, Nilsson PA, Grahn J, Minnich AJ
Nature Materials, 14(2), 187, 2015
2 Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
Westlund A, Sangare P, Ducournau G, Iniguez-de-la-Torre I, Nilsson PA, Gaquiere C, Desplanque L, Wallart X, Millithaler JF, Gonzalez T, Mateos J, Grahn J
Solid-State Electronics, 104, 79, 2015
3 Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J
Solid-State Electronics, 91, 74, 2014
4 True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
Moschetti G, Abbasi M, Nilsson PA, Hallen A, Desplanque L, Wallart X, Grahn J
Solid-State Electronics, 79, 268, 2013
5 DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
Moschetti G, Lefebvre E, Fagerlind M, Nilsson PA, Desplanque L, Wallart X, Grahn J
Solid-State Electronics, 87, 85, 2013
6 InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
Moschetti G, Wadefalk N, Nilsson PA, Roelens Y, Noudeviwa A, Desplanque L, Wallart X, Danneville F, Dambrine G, Bollaert S, Grahn J
Solid-State Electronics, 64(1), 47, 2011
7 Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate
Hjelmgren H, Andersson K, Eriksson J, Nilsson PA, Sudow M, Rorsman N
Solid-State Electronics, 51(8), 1144, 2007
8 Field Effect Mobility in n-channel Si face 4H-SiC MOSFET with Gate oxide Grown on Aluminium Ion-implanted Material
Gudjonsson G, Olafsson HO, Allerstam F, Nilsson PA, Sveinbjornsson EO, Rodle T, Jos R
Materials Science Forum, 483, 833, 2005
9 High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material
Sveinbjornsson EO, Olafsson HO, Gudjonsson G, Allerstam F, Nilsson PA, Syvajarvi M, Yakimova R, Hallin C, Rodle T, Jos R
Materials Science Forum, 483, 841, 2005
10 Planar Schottky microwave diodes on 4H-SiC
Sudow M, Rorsman N, Nilsson PA, Zirath H
Materials Science Forum, 483, 937, 2005