화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Extraction of the oxide charge density at front and back interfaces of SOI nMOSFETs devices
Nicolett AS, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 46(9), 1381, 2002
2 Extraction of the lightly doped drain concentration of fully depleted SOINMOSFETs using the back gate bias effect
Nicolett AS, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 44(4), 677, 2000
3 Simultaneous extraction of the silicon film and front oxide thicknesses on fully depleted SOI nMOSFETs
Nicolett AS, Martino JA, Simoen E, Claeys C
Solid-State Electronics, 44(11), 1961, 2000