검색결과 : 14건
No. | Article |
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1 |
Fabrication and characterization of periodic arrays of epitaxial Ni-suicide nanocontacts on (110)Si Cheng SL, Chang LH, Chuang CF, Chen H Applied Surface Science, 343, 88, 2015 |
2 |
Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1-xCx layers on Si(100) Cheng SL, Tseng YC, Lee SW, Chen H Applied Surface Science, 258(22), 8713, 2012 |
3 |
Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization Peng SL, Feng N, Hu DK, He DY, Byun CW, Lee YW, Joo SK Current Applied Physics, 12(6), 1470, 2012 |
4 |
Effect of erbium interlayer on nickel silicide formation on Si(100) Huang W, Min YL, Ru GP, Jiang YL, Qu XP, Li BZ Applied Surface Science, 254(7), 2120, 2008 |
5 |
Study of Ni/Si(100) solid-state reaction with Al addition Huang YF, Jiang YL, Ru GP, Li BZ Applied Surface Science, 254(17), 5631, 2008 |
6 |
Ni-silicide precursor for gate electrodes Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y Thin Solid Films, 515(12), 4980, 2007 |
7 |
A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates Muller M, Mondot A, Aime D, Froment B, Talbot A, Roux JM, Ribes G, Morand Y, Descombes S, Gouraud P, Leverd F, Pokrant S, Toffoli A, Skotnicki T Solid-State Electronics, 50(4), 620, 2006 |
8 |
Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK Solid-State Electronics, 50(7-8), 1269, 2006 |
9 |
Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes Ru GP, Van Meirhaeghe RL, Forment S, Jiang YL, Qu XP, Zhu SY, Li BZ Solid-State Electronics, 49(4), 606, 2005 |
10 |
Co/Ni 복합실리사이드의 메탈 콘택 건식식각 안정성 연구 송오성, 범성진, 김득중 Korean Journal of Materials Research, 14(8), 573, 2004 |