화학공학소재연구정보센터
검색결과 : 14건
No. Article
1 Fabrication and characterization of periodic arrays of epitaxial Ni-suicide nanocontacts on (110)Si
Cheng SL, Chang LH, Chuang CF, Chen H
Applied Surface Science, 343, 88, 2015
2 Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si1-xCx layers on Si(100)
Cheng SL, Tseng YC, Lee SW, Chen H
Applied Surface Science, 258(22), 8713, 2012
3 Polycrystalline silicon thin films prepared by Ni silicide induced crystallization and the dopant effects on the crystallization
Peng SL, Feng N, Hu DK, He DY, Byun CW, Lee YW, Joo SK
Current Applied Physics, 12(6), 1470, 2012
4 Effect of erbium interlayer on nickel silicide formation on Si(100)
Huang W, Min YL, Ru GP, Jiang YL, Qu XP, Li BZ
Applied Surface Science, 254(7), 2120, 2008
5 Study of Ni/Si(100) solid-state reaction with Al addition
Huang YF, Jiang YL, Ru GP, Li BZ
Applied Surface Science, 254(17), 5631, 2008
6 Ni-silicide precursor for gate electrodes
Ishikawa M, Muramoto I, Machida H, Imai S, Ogura A, Ohshita Y
Thin Solid Films, 515(12), 4980, 2007
7 A new CMP-less integration approach for highly scaled totally silicided (TOSI) gate bulk transistors based on the use of selective S/D Si epitaxy and ultra-low gates
Muller M, Mondot A, Aime D, Froment B, Talbot A, Roux JM, Ribes G, Morand Y, Descombes S, Gouraud P, Leverd F, Pokrant S, Toffoli A, Skotnicki T
Solid-State Electronics, 50(4), 620, 2006
8 Determination of the interface properties of Ni-silicided strained-Si/SiGe heterostructure Schottky diodes using capacitance-voltage technique
Saha AR, Chattopadhyay S, Das R, Bose C, Maiti CK
Solid-State Electronics, 50(7-8), 1269, 2006
9 Voltage dependence of effective barrier height reduction in inhomogeneous Schottky diodes
Ru GP, Van Meirhaeghe RL, Forment S, Jiang YL, Qu XP, Zhu SY, Li BZ
Solid-State Electronics, 49(4), 606, 2005
10 Co/Ni 복합실리사이드의 메탈 콘택 건식식각 안정성 연구
송오성, 범성진, 김득중
Korean Journal of Materials Research, 14(8), 573, 2004