화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 GaSb-based > 3 mu m laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation
Kaspi R, Lu CA, Newell TC, Yang C, Luong S
Journal of Crystal Growth, 424, 24, 2015
2 Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of similar to 3.3 mu m diode lasers
Kaspi R, Lu CT, Yang C, Newell TC, Luong S
Journal of Crystal Growth, 425, 5, 2015
3 Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures
Gray AL, Stintz A, Malloy KJ, Newell TC, Lester LF
Journal of Crystal Growth, 222(4), 726, 2001