검색결과 : 3건
No. | Article |
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1 |
GaSb-based > 3 mu m laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation Kaspi R, Lu CA, Newell TC, Yang C, Luong S Journal of Crystal Growth, 424, 24, 2015 |
2 |
Desorption mass spectrometry: Revisiting the in-situ calibration technique for mixed group-V alloy MBE growth of similar to 3.3 mu m diode lasers Kaspi R, Lu CT, Yang C, Newell TC, Luong S Journal of Crystal Growth, 425, 5, 2015 |
3 |
Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures Gray AL, Stintz A, Malloy KJ, Newell TC, Lester LF Journal of Crystal Growth, 222(4), 726, 2001 |