검색결과 : 23건
| No. | Article |
|---|---|
| 1 |
Investigation of single crystal 4H-SiC growth by the Solvent-Laser Heated Floating Zone technique Woodworth AA, Neudeck PG, Sayir A, Sola F, Dudley M, Raghothamachar B Journal of Crystal Growth, 392, 34, 2014 |
| 2 |
Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition Abadier M, Berechman RA, Neudeck PG, Trunek AJ, Skowronski M Journal of Crystal Growth, 347(1), 45, 2012 |
| 3 |
Increased nitrogen doping of thin lateral SiC cantilevers Trunek AJ, Neudeck PG, Matocha K, Dunne G Journal of Crystal Growth, 310(7-9), 1794, 2008 |
| 4 |
Step structures produced by hydrogen etching of initially step-free (0001) 4H-SiC mesas Powell JA, Neudeck PG, Trunek AJ, Abel PB Materials Science Forum, 483, 753, 2005 |
| 5 |
Characterization of SiC epitaxial structures using high-resolution X-ray diffraction techniques Huang XR, Dudley M, Cho W, Okojie RS, Neudeck PG Materials Science Forum, 457-460, 157, 2004 |
| 6 |
Step free surface heteroepitaxy of 3C-SiC layers on patterned 4H/6H-SiC mesas and cantilevers Neudeck PG, Powell JA, Trunek AJ, Spry DJ Materials Science Forum, 457-460, 169, 2004 |
| 7 |
Comparative growth behavior of 3C-SiC mesa heterofilms with and without extended defects Trunek AJ, Neudeck PG, Powell JA, Spry DJ Materials Science Forum, 457-460, 261, 2004 |
| 8 |
High breakdown field P-type 3C-SiC Schottky diodes grown on step-free 4H-SiC mesas Spry DJ, Trunek AJ, Neudeck PG Materials Science Forum, 457-460, 1061, 2004 |
| 9 |
Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers Nigam S, Kim J, Luo B, Ren F, Chung GY, Shenai K, Neudeck PG, Pearton SJ, Williams JR Solid-State Electronics, 47(9), 1461, 2003 |
| 10 |
Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography Dudley M, Vetter WM, Neudeck PG Journal of Crystal Growth, 240(1-2), 22, 2002 |