검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Photoelectric properties of highly excited GaN : Fe epilayers, zgrown by modulation- and continuous-doping techniques Bougrioua Z, Azize M, Beaumont B, Gibart P, Malinauskas T, Neimontas K, Mekys A, Storasta J, Jarasiunas K Journal of Crystal Growth, 300(1), 228, 2007 |
| 2 |
Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers Neimontas K, Aleksiejunas R, Sudzius M, Jarasiunas K, Bergman JP Materials Science Forum, 483, 413, 2005 |