검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy Zhu T, Martin D, Butte R, Napierala J, Grandjean N Journal of Crystal Growth, 300(1), 186, 2007 |
| 2 |
Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers Napierala J, Martin D, Grandjean N, Ilegems M Journal of Crystal Growth, 289(2), 445, 2006 |
| 3 |
Selective GaN epitaxy on Si(111) substrates using porous aluminum oxide buffer layers Napierala J, Buhlmann HJ, Ilegems M Journal of the Electrochemical Society, 153(2), G125, 2006 |
| 4 |
GaN laterally overgrown on sapphire by low pressure hydride vapor phase epitaxy Napierala J, Martin D, Buhlmann HJ, Gradecak S, Ilegems M Materials Science Forum, 457-460, 1581, 2004 |
| 5 |
Two-particle surface diffusion-reaction models of vapour-phase epitaxial growth on vicinal surfaces Pimpinelli A, Cadoret R, Gil-Lafon E, Napierala J, Trassoudaine A Journal of Crystal Growth, 258(1-2), 1, 2003 |
| 6 |
Direct condensation modelling for a two-particle growth system: application to GaAs grown by hydride vapour phase epitaxy Gil-Lafon E, Napierala J, Pimpinelli A, Cadoret R, Trassoudaine A, Castelluci D Journal of Crystal Growth, 258(1-2), 14, 2003 |
| 7 |
Selective growth of GaAs by HVPE: keys for accurate control of the growth morphologies Gil-Lafon E, Napierala J, Castelluci D, Pimpinelli A, Cadoret R, Gerard B Journal of Crystal Growth, 222(3), 482, 2001 |
| 8 |
Thermodynamical and kinetic study of the GaN growth by HVPE under nitrogen Aujol E, Napierala J, Trassoudaine A, Gil-Lafon E, Cadoret R Journal of Crystal Growth, 222(3), 538, 2001 |
| 9 |
Conformal MOVPE of (Al)GaAs on silicon using alternative chlorine-containing precursors Philippens M, Oligschlaeger R, Gerard B, Rushworth S, Gil-Lafon E, Napierala J, Jimenez J, Heime K Journal of Crystal Growth, 221, 225, 2000 |