화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Characterization of Colloidal Amorphous Arrays Prepared by Uniaxial Pressure Application
Naoi Y, Seki T, Ohnuki R, Yoshioka S, Takeoka Y
Langmuir, 35(43), 13983, 2019
2 Development of angle-independent color material using colloidal amorphous array
Naoi Y, Seki T, Yoshioka S, Takeoka Y
Molecular Crystals and Liquid Crystals, 688(1), 105, 2019
3 AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate
Matsuoka R, Okimoto T, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 311(10), 2847, 2009
4 Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD
Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 298, 300, 2007
5 Effect of middle temperature intermediate layer on crystal quality of AlGaN grown on sapphire substrates by metalorganic chemical vapor deposition
Tsukihara M, Sumiyoshi K, Okimoto T, Kataoka K, Kawamichi S, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 300(1), 190, 2007
6 Interdiffusion induced In(Ga)NAs films growth on GaAs substrates by low-pressure metalorganic chemical vapor deposition
Yan FW, Naoi Y, Tsukihara M, Yadani T, Sakai S
Journal of Crystal Growth, 282(1-2), 29, 2005
7 Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Sakai S, Collins GJ
Journal of Crystal Growth, 250(3-4), 290, 2003
8 Growth of diamond films on grooved Si substrates
Yamamoto H, Naoi Y, Shintani Y
Journal of Crystal Growth, 236(1-3), 176, 2002
9 Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Collins GJ, Sakai S
Journal of Crystal Growth, 222(3), 511, 2001
10 Chemical composition, morphology, and deep level electronic states of GaN (0001) (1X1) surfaces prepared by indium decapping
Young AP, Brillson LJ, Naoi Y, Tu CW
Journal of Vacuum Science & Technology B, 19(6), 2063, 2001