| 1 |
Effect of low-temperature InGaN interlayers on structural and optical properties of In-rich InGaN
Na H, Takado S, Sawada S, Kurouchi M, Akagi T, Naoi H, Araki T, Nanishi Y
Journal of Crystal Growth, 300(1), 177, 2007 |
| 2 |
Growth of InN nanocolumns by RF-MBE
Nishikawa S, Nakao Y, Naoi H, Araki T, Na H, Nanishi Y
Journal of Crystal Growth, 301, 490, 2007 |
| 3 |
Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures
Naoi H, Kurouchi M, Muto D, Araki T, Miyajima T, Nanishi Y
Journal of Crystal Growth, 288(2), 283, 2006 |
| 4 |
The effect of substrate polarity on the growth of InN by RF-MBE
Naoi H, Matsuda F, Araki T, Suzuki A, Nanishi Y
Journal of Crystal Growth, 269(1), 155, 2004 |
| 5 |
Radio frequency-molecular beam epitaxial growth of InN epitaxial films on (0001)sapphire and their properties
Araki T, Saito Y, Yamaguchi T, Kurouchi M, Nanishi Y, Naoi H
Journal of Vacuum Science & Technology B, 22(4), 2139, 2004 |
| 6 |
Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask
Naoi H, Narukawa M, Miyake H, Hiramatsu K
Journal of Crystal Growth, 248, 573, 2003 |
| 7 |
Growth of InAs on GaAs(100) by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Sakai S, Collins GJ
Journal of Crystal Growth, 250(3-4), 290, 2003 |
| 8 |
Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Collins GJ, Sakai S
Journal of Crystal Growth, 222(3), 511, 2001 |
| 9 |
Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals
Naoi H, Shaw DM, Collins GJ, Sakai S
Journal of Crystal Growth, 219(4), 481, 2000 |
