검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Compact modeling of triple gate junctionless MOSFETs for accurate circuit design in a wide temperature range Pavanello MA, Cerdeira A, Doria RT, Ribeiro TA, Avila-Herrera F, Estrada M Solid-State Electronics, 159, 116, 2019 |
| 2 |
CuPc nanowires transistors fabricated by vacuum thermal deposition Gu W, Feng XQ, Yang BX, Zhang JH Molecular Crystals and Liquid Crystals, 651(1), 243, 2017 |
| 3 |
Leakage current conduction in metal gate junctionless nanowire transistors Oproglidis TA, Karatsori TA, Barraud S, Ghibaudo G, Dimitriadis CA Solid-State Electronics, 131, 20, 2017 |
| 4 |
Size and temperature dependence of the electron-phonon scattering by donors in nanowire transistors Bescond M, Carrillo-Nunez H, Berrada S, Cavassilas N, Lannoo M Solid-State Electronics, 122, 1, 2016 |
| 5 |
Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability Tanaka C, Saitoh M, Ota K, Numata T Solid-State Electronics, 109, 58, 2015 |
| 6 |
Field Effect Transistor with Electrodeposited ZnO Nanowire Channel Florica C, Matei E, Costas A, Molares MET, Enculescu I Electrochimica Acta, 137, 290, 2014 |
| 7 |
Experimental study of back gate bias effect and short channel effect in ultra-thin buried oxide tri-gate nanowire MOSFETs Ota K, Saitoh M, Tanaka C, Numata T Solid-State Electronics, 91, 123, 2014 |
| 8 |
Analytical drain current and threshold voltage model and device design of short-channel Si nanowire transistors Tanaka C, Hagishima D, Uchida K, Numata T Solid-State Electronics, 86, 27, 2013 |
| 9 |
Influence of discrete dopant on quantum transport in silicon nanowire transistors Akhavan ND, Ferain I, Yu R, Razavi P, Colinge JP Solid-State Electronics, 70, 92, 2012 |
| 10 |
Electrical characteristics of 20-nm junctionless Si nanowire transistors Park CH, Ko MD, Kim KH, Baek RH, Sohn CW, Baek CK, Park S, Deen MJ, Jeong YH, Lee JS Solid-State Electronics, 73, 7, 2012 |