검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Hydride vapor phase epitaxy of GaN on the vicinal c-sapphire with a CrN interlayer Lee HJ, Ha JS, Lee HJ, Lee SW, Lee SH, Goto H, Hong SK, Cho MW, Yao T, Fujito K, Shimoyama K, Namita H, Nagao S Journal of Crystal Growth, 311(3), 470, 2009 |
| 2 |
Bulk GaN crystals grown by HVPE Fujito K, Kubo S, Nagaoka H, Mochizuki T, Namita H, Nagao S Journal of Crystal Growth, 311(10), 3011, 2009 |
| 3 |
Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction Yoshida Y, Akimoto K, Emoto T, Kikuchi S, Itagaki K, Namita H Applied Surface Science, 234(1-4), 409, 2004 |
| 4 |
Phase separation in InAlAs grown by MOVPE with a low growth temperature Kurihara K, Takashima M, Sakata K, Ueda R, Takahara M, Ikeda H, Namita H, Nakamura T, Shimoyama K Journal of Crystal Growth, 271(3-4), 341, 2004 |
| 5 |
Ordering structure along the [001] direction of InAlAs Kurihara K, Namita H, Ueda R, Takashima M, Akimoto K, Sakata K, Takahashi T, Nakamura T, Shimoyama K Journal of Crystal Growth, 272(1-4), 9, 2004 |
| 6 |
Lattice distortion near InGaP compound semiconductor surface due to surface treatment of bias sputtering Emoto T, Yoshida Y, Akimoto K, Ichimiya A, Kikuchi S, Itagaki K, Namita H Applied Surface Science, 216(1-4), 83, 2003 |
| 7 |
XAFS and TOF-SIMS analysis of SEI layers on electrodes Ota H, Akai T, Namita H, Yamaguchi S, Nomura M Journal of Power Sources, 119, 567, 2003 |