화학공학소재연구정보센터
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No. Article
1 Crystal orientation of monoclinic beta-Ga2O3 thin films formed on cubic MgO substrates with a gamma-Ga2O3 interfacial layer
Nakagomi S, Kokubun Y
Journal of Crystal Growth, 479, 67, 2017
2 The orientational relationship between monoclinic beta-Ga2O3 and cubic NiO
Nakagomi S, Kubo S, Kokubun Y
Journal of Crystal Growth, 445, 73, 2016
3 NiO films grown epitaxially on MgO substrates by sol-gel method
Kokubun Y, Amano Y, Meguro Y, Nakagomi S
Thin Solid Films, 601, 76, 2016
4 Crystal orientation of beta-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
Nakagomi S, Kokubun Y
Journal of Crystal Growth, 349(1), 12, 2012
5 Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode
Nakagomi S, Takahashi M, Kokubun Y, Uneus L, Savage S, Wingbrant H, Andersson M, Lundstrom I, Lofdahl M, Spetz AL
Materials Science Forum, 457-460, 1507, 2004
6 Preparation of phosphorous dope beta-irondisilicide thin films and application for devices
Ehara T, Nakagomi S, Kokubun Y
Solid-State Electronics, 47(2), 353, 2003
7 The effect of hydrogen diffusion in p- and n-type SiC Schottky diodes at high temperatures
Uneus L, Nakagomi S, Linnarsson M, Janson MS, Svensson BG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Ekedahl LG, Lunstrom I, Spetz AL
Materials Science Forum, 389-3, 1419, 2002
8 Influence of epitaxial layer on SiC Schottky diode gas sensors operated under high-temperature conditions
Nakagomi S, Shinobu H, Uneus L, Lundstrom I, Ekedahl LG, Yakimova R, Syvajarvi M, Henry A, Janzen E, Spetz AL
Materials Science Forum, 389-3, 1423, 2002
9 beta-FeSi2-base MIS diodes fabricated by sputtering method
Ehara T, Sasaki Y, Saito K, Nakagomi S, Kokubun Y
Applied Surface Science, 175, 96, 2001