화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures
Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 20(3), 1205, 2002
2 Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
Lubyshev D, Liu WK, Stewart TR, Cornfeld AB, Fang XM, Xu X, Specht P, Kisielowski C, Naidenkova M, Goorsky MS, Whelan CS, Hoke WE, Marsh PF, Millunchick JM, Svensson SP
Journal of Vacuum Science & Technology B, 19(4), 1510, 2001
3 Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 18(3), 1658, 2000