화학공학소재연구정보센터
검색결과 : 17건
No. Article
1 A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates
Pedro M, Martin-Martinez J, Rodriguez R, Gonzalez MB, Campabadal F, Nafria M
Solid-State Electronics, 159, 57, 2019
2 A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
Diaz-Fortuny J, Martin-Martinez J, Rodriguez R, Castro-Lopez R, Roca E, Fernandez FV, Nafria M
Solid-State Electronics, 159, 99, 2019
3 Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2
Grossi A, Zambelli C, Olivo P, Crespo-Yepes A, Martin-Martinez J, Rodriguez R, Nafria M, Perez E, Wenger C
Solid-State Electronics, 128, 187, 2017
4 New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM
Maestro M, Diaz J, Crespo-Yepes A, Gonzalez MB, Martin-Martinez J, Rodriguez R, Nafria M, Campabadal F, Aymerich X
Solid-State Electronics, 115, 140, 2016
5 Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques
Berthold T, Benstetter G, Frammelsberger W, Rodriguez R, Nafria M
Applied Surface Science, 356, 921, 2015
6 Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions
Moras M, Martin-Martinez J, Rodriguez R, Nafria M, Aymerich X, Simoen E
Solid-State Electronics, 101, 131, 2014
7 Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization
Lanza M, Bayerl A, Gao T, Porti M, Nafria M, Jing GY, Zhang YF, Liu ZF, Duan HL
Advanced Materials, 25(10), 1440, 2013
8 Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon
Rodriguez R, Martin-Martinez J, Crespo-Yepes A, Porti M, Nafria M, Aymerich X
Journal of the Electrochemical Society, 159(5), H529, 2012
9 Grain boundary-driven leakage path formation in HfO2 dielectrics
Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R
Solid-State Electronics, 65-66, 146, 2011
10 Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs
Crespo-Yepes A, Martin-Martinez J, Rothschild A, Rodriguez R, Nafria M, Aymerich X
Solid-State Electronics, 65-66, 157, 2011