검색결과 : 17건
No. | Article |
---|---|
1 |
A flexible characterization methodology of RRAM: Application to the modeling of the conductivity changes as synaptic weight updates Pedro M, Martin-Martinez J, Rodriguez R, Gonzalez MB, Campabadal F, Nafria M Solid-State Electronics, 159, 57, 2019 |
2 |
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models Diaz-Fortuny J, Martin-Martinez J, Rodriguez R, Castro-Lopez R, Roca E, Fernandez FV, Nafria M Solid-State Electronics, 159, 99, 2019 |
3 |
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2 Grossi A, Zambelli C, Olivo P, Crespo-Yepes A, Martin-Martinez J, Rodriguez R, Nafria M, Perez E, Wenger C Solid-State Electronics, 128, 187, 2017 |
4 |
New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM Maestro M, Diaz J, Crespo-Yepes A, Gonzalez MB, Martin-Martinez J, Rodriguez R, Nafria M, Campabadal F, Aymerich X Solid-State Electronics, 115, 140, 2016 |
5 |
Nanoscale characterization of CH3-terminated Self-Assembled Monolayer on copper by advanced scanning probe microscopy techniques Berthold T, Benstetter G, Frammelsberger W, Rodriguez R, Nafria M Applied Surface Science, 356, 921, 2015 |
6 |
Negative Bias Temperature Instabilities induced in devices with millisecond anneal for ultra-shallow junctions Moras M, Martin-Martinez J, Rodriguez R, Nafria M, Aymerich X, Simoen E Solid-State Electronics, 101, 131, 2014 |
7 |
Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization Lanza M, Bayerl A, Gao T, Porti M, Nafria M, Jing GY, Zhang YF, Liu ZF, Duan HL Advanced Materials, 25(10), 1440, 2013 |
8 |
Dielectric Breakdown In Ultra-Thin Hf Based Gate Stacks: A Resistive Switching Phenomenon Rodriguez R, Martin-Martinez J, Crespo-Yepes A, Porti M, Nafria M, Aymerich X Journal of the Electrochemical Society, 159(5), H529, 2012 |
9 |
Grain boundary-driven leakage path formation in HfO2 dielectrics Bersuker G, Yum J, Vandelli L, Padovani A, Larcher L, Iglesias V, Porti M, Nafria M, McKenna K, Shluger A, Kirsch P, Jammy R Solid-State Electronics, 65-66, 146, 2011 |
10 |
Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs Crespo-Yepes A, Martin-Martinez J, Rothschild A, Rodriguez R, Nafria M, Aymerich X Solid-State Electronics, 65-66, 157, 2011 |