검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Enhancement of fatty acid biosynthesis by exogenous acetyl-CoA carboxylase and pantothenate kinase inEscherichia coli Satoh S, Ozaki M, Matsumoto S, Nabatame T, Kaku M, Shudo T, Asayama M, Chohnan S Biotechnology Letters, 42(12), 2595, 2020 |
| 2 |
Improved leakage current properties of ZrO2/(Ta/Nb)O-x-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors Onaya T, Nabatame T, Sawada T, Kurishima K, Sawamoto N, Ohi A, Chikyow T, Ogura A Thin Solid Films, 655, 48, 2018 |
| 3 |
Improvement of the effective work function and transmittance of thick indium tin oxide/ultrathin ruthenium doped indium oxide bilayers as transparent conductive oxide Taweesup K, Yamamoto I, Chikyow T, Lothongkum G, Tsukagoshi K, Ohishi T, Tungasmita S, Visuttipitukul P, Ito K, Takahashi M, Nabatame T Thin Solid Films, 598, 126, 2016 |
| 4 |
Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition Nagata T, Kobashi K, Yamashita Y, Yoshikawa H, Paulsamy C, Suzuki Y, Nabatame T, Ogura A, Chikyow T Thin Solid Films, 591, 105, 2015 |
| 5 |
The Effect of Physical and Chemical Cues on Hepatocellular Function and Morphology Abdellatef SA, Ohi A, Nabatame T, Taniguchi A International Journal of Molecular Sciences, 15(3), 4299, 2014 |
| 6 |
Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shift Nabatame T, Kimura M, Yamada H, Ohi A, Ohishi T, Chikyow T Thin Solid Films, 520(8), 3387, 2012 |
| 7 |
Metal carbide-induced negative flatband voltage shift in TaCx and HfCx/HfO2 gate stacks Mizubayashi W, Akiyama K, Wang W, Ikeda M, Iwamoto K, Kamimuta Y, Hirano A, Ota H, Nabatame T, Toriumi A Applied Surface Science, 254(19), 6123, 2008 |
| 8 |
Dielectric evolution characteristics of HfCN metal-electrode-gated MOS stacks Wang WW, Nabatame T, Shimogaki Y Journal of the Electrochemical Society, 154(2), G25, 2007 |
| 9 |
Highly reliable high-k gate dielectrics with gradual Hf-profile in the HfO2/SiO2 interface region Iwamoto K, Mizubayashi W, Ogawa A, Nabatame T, Satake H, Toriumi A Solid-State Electronics, 50(6), 999, 2006 |
| 10 |
Effect of NH3 on the fabrication of HfN as gate-electrode using MOCVD Wang WW, Nabatame T, Shimogaki Y Thin Solid Films, 498(1-2), 75, 2006 |