검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Low frequency noise investigation of n-MOSFET single cells for memory applications Ioannidis EG, Leisenberger FP, Enichlmair H Solid-State Electronics, 151, 36, 2019 |
| 2 |
Flexible nonvolatile memory devices based on Au/PMMA nanocomposites deposited on PEDOT:PSS/Ag nanowire hybrid electrodes Sung S, Kim TW Applied Surface Science, 411, 67, 2017 |
| 3 |
Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability Fan YS, Liu PT, Hsu CH Thin Solid Films, 549, 54, 2013 |
| 4 |
Characteristics of plasma immersion ion implantation treatment on tungsten nanocrystal nonvolatile memory Lai CS, Wang JC, Chang LC, Liao YK, Chou PC, Chang WC, Ai CF, Tsai WF Solid-State Electronics, 77, 31, 2012 |
| 5 |
Data retention under gate stress on a NVM array Djenadi R, Micolau G, Postel-Pellerin J, Chiquet P, Laffont R, Ogier JL, Regnier A, Lalande F, Melkonian J Solid-State Electronics, 78, 80, 2012 |
| 6 |
A novel fabrication process of a gate offset nonvolatile memory on glass and the influence of the gate offset structure on the device characteristics Duy NV, Lakshminarayan N, Jung S, Nga NT, Son DN, Lee W, Yi J Solid-State Electronics, 55(1), 8, 2011 |
| 7 |
Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects Zaka A, Singer J, Dornel E, Garetto D, Rideau D, Rafhay Q, Clerc R, Manceau JP, Degors N, Boccaccio C, Tavernier C, Jaouen H Solid-State Electronics, 63(1), 158, 2011 |
| 8 |
Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer Oh SM, You HW, Kim KS, Lee YH, Cho WJ Current Applied Physics, 10(1), E18, 2010 |
| 9 |
Improved characteristics of Gd2O3 nanocrystal memory with substrate high-low junction Wang JC, Lin CT, Lai CS, Hsu JL, Ai CF Solid-State Electronics, 54(12), 1493, 2010 |
| 10 |
On the accuracy of current TCAD hot carrier injection models in nanoscale devices Zaka A, Rafhay Q, Iellina M, Palestri P, Clerc R, Rideau D, Garetto D, Dornel E, Singer J, Pananakakis G, Tavernier C, Jaouen H Solid-State Electronics, 54(12), 1669, 2010 |