검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
4H-SiC surface energy tuning by nitrogen up-take Pitthan E, Amarasinghe VP, Xu C, Gustafsson T, Stedile FC, Feldman LC Applied Surface Science, 402, 192, 2017 |
| 2 |
High temperature NO annealing of deposited SiO2 and SiON films on n-type 4H-SiC Yano H, Hatayama T, Uraoka Y, Fuyuki T Materials Science Forum, 483, 685, 2005 |
| 3 |
930V, 170m Omega.cm(2) lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing Wang W, Banerjee S, Chow TP, Gutmann RJ Materials Science Forum, 457-460, 1413, 2004 |
| 4 |
Effect of process variations on 4H silicon carbide n-channel MOSFET mobilities Lu CY, Cooper JA, Chung GY, Williams JR, McDonald K, Feldman LC Materials Science Forum, 389-3, 977, 2002 |
| 5 |
Large-area (3.3 mm x 3.3 mm) power MOSFETs in 4H-SiC Ryu SH, Agarwal A, Richmond J, Das M, Lipkin L, Palmour J, Saks N, Williams J Materials Science Forum, 389-3, 1195, 2002 |