| 1 |
Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment
Li MJ, Wang JY, Wang HY, Cao QR, Liu JQ, Huang CY
Solid-State Electronics, 156, 58, 2019 |
| 2 |
Improvement on the electrical characteristics of Pd/HfO2/6H-SiC MIS capacitors using post deposition annealing and post metallization annealing
Esakky P, Kailath BJ
Applied Surface Science, 413, 66, 2017 |
| 3 |
Effects of Pressure and Electrode Length on the Abatement of N2O and CF4 in a Low-Pressure Plasma Reactor
Hur M, Lee JO, Lee JY, Kang WS, Song YH
Plasma Chemistry and Plasma Processing, 36(6), 1589, 2016 |
| 4 |
N2O plasma treatment for minimization of background plating in silicon solar cells with Ni-Cu front side metallization
Raval MC, Saseendran SS, Suckow S, Saravanan S, Solanki CS, Kottantharayil A
Solar Energy Materials and Solar Cells, 144, 671, 2016 |
| 5 |
The effect of nitrous oxide plasma treatment on the bias temperature stress of metal oxide thin film transistors with high mobility
Tseng WH, Fang SW, Lu CY, Chuang HY, Chang FW, Lin GY, Chen TW, Ma KH, Chen HS, Chen TK, Chen YH, Lee JY, Shih TH, Ting HC, Chen CY, Lin YH, Hong HJ
Solid-State Electronics, 103, 173, 2015 |
| 6 |
Effects of N2O plasma treatment on perhydropolysilazane spin-on-dielectrics for inter-layer-dielectric applications
Park KS, Ko PS, Kim SD
Thin Solid Films, 551, 57, 2014 |
| 7 |
Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass
Jung S, Hwang S, Kim K, Dhungel SK, Chung HK, Choi BD, Lee KY, Yi J
Thin Solid Films, 515(16), 6615, 2007 |
| 8 |
Ar/N2O remote plasma-assisted oxidation of Si(100): Plasma chemistry, growth kinetics, and interfacial reactions
Smith BC, Khandelwal A, Lamb HH
Journal of Vacuum Science & Technology B, 18(3), 1757, 2000 |
| 9 |
N-2-Plasma-Nitridation Effects on Porous Silicon
Yokomichi H, Masuda A, Yonezawa Y, Shimizu T
Thin Solid Films, 281-282, 568, 1996 |
