검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
MOVPE growth and characterization of heteroepitaxial germanium on silicon using iBuGe as precursor Attolini G, Ponraj JS, Frigeri C, Buffagni E, Ferrari C, Musayeva N, Jabbarov R, Bosi M Applied Surface Science, 360, 157, 2016 |
| 2 |
Homo and hetero epitaxy of Germanium using isobutylgermane Attolini G, Bosi M, Musayeva N, Peosi C, Ferrari C, Arumainathan S, Timo G Thin Solid Films, 517(1), 404, 2008 |
| 3 |
Characterisation of GaAsN layers grown by MOVPE Pelosi C, Attolini G, Bosi M, Avella M, Calicchio M, Musayeva N, Jimenez J Journal of Crystal Growth, 287(2), 625, 2006 |