검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors Rathkanthiwar S, Kaira A, Muralidharan R, Nath DN, Raghavan S Journal of Crystal Growth, 498, 35, 2018 |
| 2 |
Interface traps at Al2O3/InAlN/GaN MOS-HEMT -on-200 mm Si Kumar S, Remesh N, Dolmanan SB, Tripathy S, Raghavan S, Muralidharan R, Nath DN Solid-State Electronics, 137, 117, 2017 |
| 3 |
Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors Kaushik JK, Balakrishnan VR, Mongia D, Kumar U, Dayal S, Panwar BS, Muralidharan R Thin Solid Films, 612, 147, 2016 |
| 4 |
Nanoharvesting of GaN nanowires on Si (211) substrates by plasma-assisted molecular beam epitaxy Agrawal M, Jain A, Rao DVS, Pandey A, Goyal A, Kumar A, Lamba S, Mehta BR, Muraleedharan K, Muralidharan R Journal of Crystal Growth, 402, 37, 2014 |
| 5 |
Reversible hydrogen storage in the Li-Mg-N-H system - The effects of Ru doped single walled carbon nanotubes on NH3 emission and kinetics Demirocak DE, Srinivasan SS, Ram MK, Kuhn JN, Muralidharan R, Li X, Goswami DY, Stefanakos EK International Journal of Hydrogen Energy, 38(24), 10039, 2013 |
| 6 |
Polyhydroxybutyrate production accompanied by the effective reduction of chemical oxygen demand (COD) and biological oxygen demand (BOD) from industrial effluent Muralidharan R, Sindhuja PB, Sudalai A, Radha KV Korean Journal of Chemical Engineering, 30(12), 2191, 2013 |
| 7 |
GaN etch rate and surface roughness evolution in Cl-2/Ar based inductively coupled plasma etching Rawal DS, Arora H, Agarwal VR, Vinayak S, Kapoor A, Sehgal BK, Muralidharan R, Saha D, Malik HK Thin Solid Films, 520(24), 7212, 2012 |
| 8 |
J-V characteristics of GaN containing traps at several discrete energy levels Jain A, Kumar P, Jain SC, Muralidharan R, Chand S, Kumar V Solid-State Electronics, 54(3), 288, 2010 |
| 9 |
Structural, thermal, mechanical and optical properties of L-arginine diiodate crystal: A new nonlinear optical material Sankar R, Muralidharan R, Raghavan CM, Jayavel R Materials Chemistry and Physics, 107(1), 51, 2008 |
| 10 |
Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots Srinivasan T, Singh SN, Tiwari U, Sharma RK, Muralidharan R, Rao DVS, Balamuralikrishnan R, Muraleedharan K Journal of Crystal Growth, 280(3-4), 378, 2005 |