검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Multi-scale modelling of silicon nanocrystal synthesis by Low Pressure Chemical Vapor Deposition Zahi I, Mur P, Blaise P, Esteve A, Rouhani MD, Vergnes H, Caussat B Thin Solid Films, 519(22), 7650, 2011 |
| 2 |
Influence of the synthesis conditions of silicon nanodots in an industrial low pressure chemical vapor deposition reactor Cocheteau V, Scheid E, Mur P, Billon T, Caussat B Applied Surface Science, 254(10), 2927, 2008 |
| 3 |
Development of an original model for the synthesis of silicon nanodots by Low Pressure Chemical Vapor Deposition Cocheteau V, Mur P, Billon T, Scheid E, Caussat B Chemical Engineering Journal, 140(1-3), 600, 2008 |
| 4 |
Using silicon nanostructures for the improvement of silicon solar cells efficiency De la Torre J, Bremond G, Lemiti M, Guillot G, Mur P, Buffet N Thin Solid Films, 511, 163, 2006 |
| 5 |
Growth and characterization of LPCVD Si quantum dots on insulators Baron T, Mazen F, Hartmann JM, Mur P, Puglisi RA, Lombardo S, Ammendola G, Gerardi C Solid-State Electronics, 48(9), 1503, 2004 |
| 6 |
Development of silicon nitride dots for nanocrystal memory cells Wan YM, Buffet N, van der Jeugd K, Mur P, Mariolle D, Nicotra G, Lombardo S Solid-State Electronics, 48(9), 1519, 2004 |
| 7 |
Influence of the chemical properties of the substrate on silicon quantum dot nucleation Mazen F, Baron T, Bremond G, Buffet N, Rochat N, Mur P, Semeria MN Journal of the Electrochemical Society, 150(3), G203, 2003 |
| 8 |
A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P Solid-State Electronics, 46(3), 343, 2002 |
| 9 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |
| 10 |
Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices Mur P, Semeria MN, Olivier M, Papon AM, Leroux C, Reimbold G, Gentile P, Magnea N, Baron T, Clerc R, Ghibaudo G Applied Surface Science, 175, 726, 2001 |