검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Silicon carbide crystal and substrate technology: A survey of recent advances Hobgood HM, Brady MF, Calus MR, Jenny JR, Leonard RT, Malta DP, Muller SG, Powell AR, Tsvetkov VF, Glass RC, Carter CH Materials Science Forum, 457-460, 3, 2004 |
| 2 |
Development of large diameter high-purity semi-insulating 4H-SiC wafers for microwave devices Jenny JR, Malta DP, Calus MR, Muller SG, Powell AR, Tsvetkov VF, Hobgood HM, Glass RC, Carter CH Materials Science Forum, 457-460, 35, 2004 |
| 3 |
Large diameter 4H-SiC substrates for commercial power applications Powell AR, Leonard RT, Brady MF, Muller SG, Tsvetkov VF, Trussell R, Sumakeris JJ, Hobgood HM, Burk AA, Glass RC, Carter CH Materials Science Forum, 457-460, 41, 2004 |
| 4 |
Approaches to stabilizing the forward voltage of bipolar SiC devices Sumakeris JJ, Das M, Hobgood HM, Muller SG, Paisley MJ, Ha S, Skowronski M, Palmour JW, Carter CH Materials Science Forum, 457-460, 1113, 2004 |
| 5 |
High quality SiC substrates for semiconductor devices: From research to industrial production Muller SG, Brady MF, Brixius WH, Fechko G, Glass RC, Henshall D, Hobgood HM, Jenny JR, Leonard R, Malta D, Powell A, Tsvetkov VF, Allen S, Palmour J, Carter CH Materials Science Forum, 389-3, 23, 2002 |
| 6 |
Sublimation-grown semi-insulating SIC for high frequency devices Muller SG, Brady MF, Brixius WH, Glass RC, Hobgood HM, Jenny JR, Leonard RT, Malta DP, Powell AR, Tsvetkov VF, Allen ST, Palmour JW, Carter CH Materials Science Forum, 433-4, 39, 2002 |
| 7 |
The status of SiC bulk growth from an industrial point of view Muller SG, Glass RC, Hobgood HM, Tsvetkov VF, Brady M, Henshall D, Jenny JR, Malta D, Carter CH Journal of Crystal Growth, 211(1-4), 325, 2000 |
| 8 |
Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions Straubinger TL, Bickermann M, Grau M, Hofmann D, Kadinski L, Muller SG, Selder M, Wellmann PJ, Winnacker A Materials Science Forum, 338-3, 39, 2000 |
| 9 |
Experimental and theoretical analysis of the thermal conductivity of SiC powder as source material for SiC bulk growth Muller SG, Fricke J, Hofmann D, Horn R, Nilsson O, Rexer B Materials Science Forum, 338-3, 43, 2000 |