| 1 |
Growth optimization of GaxIn1-xAsyP1-y/GaAs(0.98 mu m) quantum wire heterostructures
Moy AM, Pickrell GW, Cheng KY
Journal of Vacuum Science & Technology B, 16(3), 1347, 1998 |
| 2 |
Temperature stabilized 1.55 mu m photoluminescence in strained GaxIn1-xAs quantum wire heterostructures
Wohlert DE, Moy AM, Chou LJ, Cheng KY, Hsieh KC
Journal of Vacuum Science & Technology B, 16(3), 1352, 1998 |
| 3 |
Spatial Variations in Luminescence and Carrier Relaxation in Molecular-Beam Epitaxial Grown (InP)(2)/(Gap)(2) Quantum Wires
Tang Y, Rich DH, Moy AM, Cheng KY
Journal of Vacuum Science & Technology B, 15(4), 1034, 1997 |
| 4 |
Yellow (5735 Angstrom) Emission GaInP Multiple-Quantum-Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy
Chen AC, Moy AM, Cheng KY
Journal of Vacuum Science & Technology B, 13(2), 762, 1995 |
| 5 |
Ultrathin Nitride Layers Grown by Molecular-Beam Epitaxy and Their Effects on Interface States in Silicon Metal-Insulator-Semiconductor Field-Effect Transistors
Fayfield RT, Chen J, Hagedorn MS, Higman TK, Moy AM, Cheng KY
Journal of Vacuum Science & Technology B, 13(2), 786, 1995 |
