화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 High mobility thin film transistors by Nd : YVO4-laser crystallization
Helen Y, Dassow R, Nerding M, Mourgues K, Raoult F, Kohler JR, Mohammed-Brahim T, Rogel R, Bonnaud O, Werner JH, Strunk HP
Thin Solid Films, 383(1-2), 143, 2001
2 Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material
Toutah H, Tala-Ighil B, Llibre JF, Rahal A, Mourgues K, Helen Y, Brahim TM, Dassow R, Kohler JR
Thin Solid Films, 383(1-2), 299, 2001
3 Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise
Mercha A, Pichon L, Carin R, Mourgues K, Bonnaud O
Thin Solid Films, 383(1-2), 303, 2001
4 State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
Tala-Ighil B, Rahal A, Mourgues K, Toutah A, Pichon L, Mohammed-Brahim T, Raoult F, Bonnaud O
Thin Solid Films, 337(1-2), 101, 1999
5 Single shot excimer laser crystallization and LPCVD silicon TFTs
Helen Y, Mourgues K, Raoult F, Mohammed-Brahim T, Bonnaud O, Rogel R, Prochasson S, Boher P, Zahorski D
Thin Solid Films, 337(1-2), 133, 1999
6 Low-Temperature (Less-Than-or-Equal-to-600 Degrees-C) Unhydrogenated in-Situ Doped Polysilicon Thin-Film Transistors - Towards a Technology for Flat-Panel Displays
Pichon L, Raoult F, Mourgues K, Kission K, Mohammedbrahim T, Bonnaud O
Thin Solid Films, 296(1-2), 133, 1997