검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
In situ molecular beam epitaxial growth of SiN films using a source port compatible electron-gun for silicon evaporation Hoke WE, Kennedy TD, Torabi A, Vandermeulen KY, Mosca JJ Journal of Vacuum Science & Technology B, 26(3), 1074, 2008 |
| 2 |
Thermodynamic analysis of cation incorporation during molecular beam epitaxy of nitride films using metal-rich growth conditions Hoke WE, Torabi A, Mosca JJ, Kennedy TD Journal of Vacuum Science & Technology B, 25(3), 978, 2007 |
| 3 |
Reaction of molecular beam epitaxial grown AIN nucleation layers with SiC substrates Hoke WE, Torabi A, Hallock RB, Mosca JJ, Kennedy TD Journal of Vacuum Science & Technology B, 24(3), 1500, 2006 |
| 4 |
Influence of AlN nucleation layer on the epitaxy of GaN/AlGaN high electron mobility transistor structure and wafer curvature Torabi A, Hoke WE, Mosca JJ, Siddiqui JJ, Hallock RB, Kennedy TD Journal of Vacuum Science & Technology B, 23(3), 1194, 2005 |
| 5 |
Growth and characterization of metamorphic In-x(AlGa)(1-x)As/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4 Hoke WE, Lyman PS, Whelan CS, Mosca JJ, Torabi A, Chang KL, Hsieh KC Journal of Vacuum Science & Technology B, 18(3), 1638, 2000 |
| 6 |
Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates Hoke WE, Lemonias PJ, Mosca JJ, Lyman PS, Torabi A, Marsh PF, McTaggart RA, Lardizabal SM, Hetzler K Journal of Vacuum Science & Technology B, 17(3), 1131, 1999 |