화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
Mooney PM, Rim K, Christiansen SH, Chan KK, Chu JO, Cai J, Chen H, Jordan-Sweet JL, Yang YY, Boyd DC
Solid-State Electronics, 49(10), 1669, 2005
2 Strained SiCMOS (SS CMOS) technology: opportunities and challenges
Rim K, Anderson R, Boyd D, Cardone F, Chan K, Chen H, Christansen S, Chu J, Jenkins K, Kanarsky T, Koester S, Lee BH, Lee K, Mazzeo V, Mocuta A, Mocuta D, Mooney PM, Oldiges P, Ott J, Ronsheim P, Roy R, Steegen A, Yang M, Zhu H, Ieong M, Wong HSP
Solid-State Electronics, 47(7), 1133, 2003
3 Roughness Analysis of Si/SiGe Heterostructures
Feenstra RM, Lutz MA, Stern F, Ismail K, Mooney PM, Legoues FK, Stanis C, Chu JO, Meyerson BS
Journal of Vacuum Science & Technology B, 13(4), 1608, 1995