검색결과 : 62건
| No. | Article |
|---|---|
| 1 |
Ab Initio Study of the Lowest-Lying Electronic States of LuCl Molecules Hamade Y, Bazzi H, Sidawi J, Taher F, Monteil Y Journal of Physical Chemistry A, 116(49), 12123, 2012 |
| 2 |
AES, LEED and PYS investigation of Au deposits on InSe/Si(111) substrate Abidri B, Ghaffour M, Abdellaoui A, Bouslama M, Hiadsi S, Monteil Y Applied Surface Science, 256(10), 3007, 2010 |
| 3 |
Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound Berrouachedi N, Bouslama M, Abdellaoui A, Ghaffour M, Jardin C, Hamaida K, Monteil Y, Lounis Z, Ouerdane A Applied Surface Science, 256(1), 21, 2009 |
| 4 |
AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment Abdellaoui A, Ghaffour M, Ouerdane A, Hamaida K, Monteil Y, Berrouachedi N, Lounis Z, Bouslama M Applied Surface Science, 254(13), 4024, 2008 |
| 5 |
Study by EELS and EPES of the stability of InPO4/InP system Ouerdane A, Bouslama M, Ghaffour M, Abdellaoui A, Hamaida K, Lounis Z, Monteil Y, Berrouachedi N, Ouhaibi A Applied Surface Science, 254(22), 7394, 2008 |
| 6 |
Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE Rodriguez P, Auvray L, Dumont H, Dazord J, Monteil Y Journal of Crystal Growth, 298, 81, 2007 |
| 7 |
Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs-GaAs - Part II: BGaAs alloy formation Dumont H, Monteil Y Journal of Crystal Growth, 290(2), 419, 2006 |
| 8 |
Low-temperature homoepitaxial growth of alpha-SiC on on-axis (0001) substrate by vapor-liquid-solid mechanism Soueidan M, Ferro G, Nsouli B, Cauwet F, Mollet L, Jacquier C, Younes G, Monteil Y Journal of Crystal Growth, 293(2), 433, 2006 |
| 9 |
Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y Materials Science Forum, 483, 117, 2005 |
| 10 |
Aluminium doping of 4H-SiC grown with HexaMethylDiSilane Sartel C, Souliere V, Zielinski M, Monteil Y, Camassel J, Rushworth S Materials Science Forum, 483, 121, 2005 |