검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Orthogonal Chemical Functionalization of Au/SiO2/TiW Patterned Substrates Zhang J, Leonard D, Yeromonahos C, Mazurczyk R, Gehin T, Monfray S, Chevolot Y, Cloarec JP Langmuir, 36(49), 14960, 2020 |
| 2 |
Oxidized Titanium Tungsten Surface Functionalization by Silane-, Phosphonic Acid-, or Ortho-dihydroxyaryl-Based Organolayers Zhang J, Yeromonahos C, Leonard D, Gehin T, Botella C, Grenet G, Benamrouche A, Penuelas J, Monfray S, Chevolot Y, Cloarec JP Langmuir, 35(29), 9554, 2019 |
| 3 |
High sensitivity pH sensing on the BEOL of industrial FDSOI transistors Rahhal L, Ayele GT, Monfray S, Cloarec JP, Fornacciari B, Pardoux E, Chevalier C, Ecoffey S, Drouin D, Morin P, Garnier P, Boeuf F, Souifi A Solid-State Electronics, 134, 22, 2017 |
| 4 |
Coupling of a bimetallic strip heat engine with a piezoelectric transducer for thermal energy harvesting Boughaleb J, Arnaud A, Monfray S, Cottinet PJ, Quenard S, Boeuf F, Guyomar D, Skotnicki T Molecular Crystals and Liquid Crystals, 628(1), 15, 2016 |
| 5 |
UTBB FDSOI: Evolution and opportunities Monfray S, Skotnicki T Solid-State Electronics, 125, 63, 2016 |
| 6 |
"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction Diouf C, Cros A, Monfray S, Mitard J, Rosa J, Gloria D, Ghibaudo G Solid-State Electronics, 85, 12, 2013 |
| 7 |
Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width Coquand R, Barraud S, Casse M, Leroux P, Vizioz C, Comboroure C, Perreau P, Ernst E, Samson MP, Maffini-Alvaro V, Tabone C, Barnola S, Munteanu D, Ghibaudo G, Monfray S, Boeuf F, Poiroux T Solid-State Electronics, 88, 32, 2013 |
| 8 |
Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes Dutta T, Rafhay Q, Clerc R, Lacord J, Monfray S, Pananakakis G, Boeuf F, Ghibaudo G Solid-State Electronics, 88, 43, 2013 |
| 9 |
Comparative study of circuit perspectives for multi-gate structures at sub-10 nm node Lacord J, Huguenin JL, Monfray S, Coquand R, Skotnicki T, Ghibaudo G, Boeuf F Solid-State Electronics, 74, 25, 2012 |
| 10 |
Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below Fenouillet-Beranger C, Perreau P, Denorme S, Tosti L, Andrieu F, Weber O, Monfray S, Barnola S, Arvet C, Campidelli Y, Haendler S, Beneyton R, Perrot C, de Buttet C, Gros P, Pham-Nguyen L, Leverd F, Gouraud P, Abbate F, Baron F, Torres A, Laviron C, Pinzelli L, Vetier J, Borowiak C, Margain A, Delprat D, Boedt F, Bourdelle K, Nguyen BY, Faynot O, Skotnicki T Solid-State Electronics, 54(9), 849, 2010 |