| 1 |
Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy: Application to Ga flux measurement
Vignaud D, Mollot F
Journal of Crystal Growth, 301, 79, 2007 |
| 2 |
MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
Yarekha DA, Godey S, Wallart X, Colder H, Zaknoune M, Mollot F
Journal of Crystal Growth, 301, 217, 2007 |
| 3 |
Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
Vignaud D, Zaknoune M, Mollot F
Journal of Crystal Growth, 291(1), 107, 2006 |
| 4 |
High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
Wallart X, Pinsard B, Mollot F
Journal of Crystal Growth, 278(1-4), 516, 2005 |
| 5 |
As-P interface-sensitive GaInP/GaAs structures grown in a production MBE system
Dhellemmes S, Godey S, Wilk A, Wallart X, Mollot F
Journal of Crystal Growth, 278(1-4), 564, 2005 |
| 6 |
CBr4 and Be heavily doped InGaAs grown in a production MBE system
Godey S, Dhellemmes S, Wilk A, Zaknoune M, Mollot F
Journal of Crystal Growth, 278(1-4), 600, 2005 |
| 7 |
Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy
Wilk A, Zaknoune M, Godey S, Dhellemmes S, Gerard P, Chaix C, Mollot F
Journal of Vacuum Science & Technology B, 22(3), 1444, 2004 |
| 8 |
Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
Wallart X, Deresmes D, Mollot F
Journal of Crystal Growth, 227, 255, 2001 |
| 9 |
Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates
Wallart X, Mollot F
Applied Surface Science, 166(1-4), 446, 2000 |
| 10 |
Low frequency noise behaviour of InP/InGaAs heterojunction bipolar waveguide phototransistors
Borgarino M, Plana R, Fendler M, Vilcot JP, Mollot F, Barette J, Decoster D, Graffeuil J
Solid-State Electronics, 44(1), 59, 2000 |
