| 1 |
Doping-induced strain in heavily B-doped (100) diamond films prepared by hot-filament chemical vapor deposition
Ohmagari S, Yamada H, Umezawa H, Chayahara A, Mokuno Y
Thin Solid Films, 680, 85, 2019 |
| 2 |
Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition
Ohmagari S, Ogura M, Umezawa H, Mokuno Y
Journal of Crystal Growth, 479, 52, 2017 |
| 3 |
Configuration of a single grown-in dislocation corresponding to one etch pit formed on the surface of CVD homoepitaxial diamond
Tsubouchi N, Mokuno Y
Journal of Crystal Growth, 455, 71, 2016 |
| 4 |
Submicron-scale diamond selective-area growth by hot-filament chemical vapor deposition
Ohmagari S, Matsumoto T, Umezawa H, Mokuno Y
Thin Solid Films, 615, 239, 2016 |
| 5 |
3C-SiC thin epilayer formation at low temperature using ion beams
Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y
Applied Surface Science, 212, 920, 2003 |
| 6 |
Reaction mechanism of the carbonization process by low-energy ion subplantation
Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y
Materials Science Forum, 389-3, 363, 2002 |
| 7 |
Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C-SiC heteroepitaxial growth on Si (100)
Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y
Journal of Vacuum Science & Technology A, 19(4), 1882, 2001 |
