검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Dopant-defect interactions in highly doped epitaxial Si:P thin films Weinrich ZN, Li X, Sharma S, Craciun V, Ahmed M, Sanchez EAC, Moffatt S, Jones KS Thin Solid Films, 685, 1, 2019 |
| 2 |
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure - Chemical Vapour Deposition tool Aubin J, Hartmann JM, Bauer M, Moffatt S Journal of Crystal Growth, 445, 65, 2016 |
| 3 |
Improved subthreshold characteristics in tunnel field-effect transistors using shallow junction technologies Chang HY, Chopra S, Adams B, Li JP, Sharma S, Kim Y, Moffatt S, Woo JCS Solid-State Electronics, 80, 59, 2013 |
| 4 |
Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument Napolitani E, Carnera A, Storti R, Privitera V, Priolo F, Mannino G, Moffatt S Journal of Vacuum Science & Technology B, 18(1), 519, 2000 |