검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Improved designs of Si-based quantum wells and Schottky diodes for IR detection Moeen M, Kolahdouz M, Salemi A, Abedin A, Ostling M, Radamson HH Thin Solid Films, 613, 19, 2016 |
| 2 |
Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane Abedin A, Moeen M, Cappetta C, Ostling M, Radamson HH Thin Solid Films, 613, 38, 2016 |
| 3 |
Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology Wang GL, Abedin A, Moeen M, Kolandouz M, Luo J, Guo YL, Chen T, Yin HX, Zhu HL, Li JF, Zhao C, Radamson HH Solid-State Electronics, 103, 222, 2015 |
| 4 |
Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs Wang GL, Moeen M, Abedin A, Xu YF, Luo J, Guo YL, Qin CL, Tang ZY, Yin HZ, Li JF, Yan J, Zhu HL, Zhao C, Chen DP, Ye TC, Kolahdouz M, Radamson HH Solid-State Electronics, 114, 43, 2015 |
| 5 |
Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane Kolahdouz M, Salemi A, Moeen M, Ostling M, Radamson HH Journal of the Electrochemical Society, 159(5), H478, 2012 |