검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
A general design guideline for strain-balanced quantum-wells toward high- efficiency photovoltaics Huang HH, Toprasertpong K, Delamarre A, Wilkins MM, Sugiyama M, Nakano Y Solar Energy, 206, 655, 2020 |
| 2 |
Junctionless nanowire transistors parameters extraction based on drain current measurements Trevisoli R, Doria RT, de Souza M, Barraud S, Pavanello MA Solid-State Electronics, 158, 37, 2019 |
| 3 |
Effect of heating on electrical transport in AlGaN/GaN Schottky barrier diodes on Si substrate Woo H, Jo Y, Kim J, Roh C, Lee J, Kim H, Im H, Hahn CK, Park J Current Applied Physics, 14, S98, 2014 |
| 4 |
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS Ong SN, Yeo KS, Chew KWJ, Chan LHK, Loo XS, Boon CC, Do MA Solid-State Electronics, 68, 32, 2012 |
| 5 |
Low-frequency noise in high-k LaLuO3/TiN MOSFETs Olyaei M, Malm BG, Hellstrom PE, Ostling M Solid-State Electronics, 78, 51, 2012 |
| 6 |
Experimental study of mobility degradation in ultrathin high-kappa based MOSFETs Atarah SA Solid-State Electronics, 55(1), 44, 2011 |
| 7 |
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics Alatise O, Olsen S, O'Neill A Solid-State Electronics, 54(6), 628, 2010 |
| 8 |
Modeling short-channel effects in channel thermal noise and induced-gate noise in MOSFETs in the NQS regime Vallur S, Jindal RP Solid-State Electronics, 53(1), 36, 2009 |
| 9 |
Modelling of radiation response of p-channel SiC MOSFETs Lee KK, Ohshima T, Itoh H Materials Science Forum, 433-4, 761, 2002 |
| 10 |
Mobility in 6H-SiC n-channel MOSFETs Scozzie CJ, Lelis AJ, McLean FB Materials Science Forum, 338-3, 1121, 2000 |