화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Improvement of SiC wafer warp by annealing
Sasaki M, Harada S, Okamoto Y, Miyanagi Y, Shiomi H
Materials Science Forum, 457-460, 829, 2004
2 The development of 2in 6H-SiC wafer with high thermal-conductivity
Miyanagi Y, Nakayama K, Shiomi H, Nishino S
Materials Science Forum, 389-3, 51, 2002
3 The development of 4H-SiC {03(3)over-bar8) wafers
Nakayama K, Miyanagi Y, Shiomi H, Nishino S, Kimoto T, Matsunami H
Materials Science Forum, 389-3, 123, 2002
4 The effect of epitaxial growth on warp of SiC wafers
Nakayama K, Miyanagi Y, Maruyama K, Okamoto Y, Shiomi H, Nishino S
Materials Science Forum, 389-3, 235, 2002
5 Stress distribution in 2in SiC wafer measured by photoelastic method
Sasaki M, Miyanagi Y, Nakayama K, Shiomi H, Nishino S
Materials Science Forum, 389-3, 403, 2002